Piezoelectricity of ordered (Ga0.5In0.5)N alloys
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Abstract
First-principles calculations are performed to compare the e33 and e31 piezoelectric coefficients of GaN and InN with those of the (Ga0.5In0.5)N alloy exhibiting an alternation of Ga and In planes along the c axis. The magnitude of e33 and e31 in the ordered alloy is found to be (15%-28%) smaller than the magnitude of the corresponding coefficients resulting from the compositional average over the GaN and InN parent compounds. The microscopic origins for this downward deviation of piezoelectricity from a linear behavior with composition are revealed and discussed. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Piezoelectricity of ordered (Ga<sub>0.5</sub>In<sub>0.5</sub>)N alloys</title><author><name sortKey="Al Yacoub, A" uniqKey="Al Yacoub A">A. Al Yacoub</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author><author><name sortKey="Bellaiche, L" uniqKey="Bellaiche L">L. Bellaiche</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Physics Department, University of Arkansas, Fayetteville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0395525</idno><date when="2001-10-01">2001-10-01</date><idno type="stanalyst">PASCAL 01-0395525 AIP</idno><idno type="RBID">Pascal:01-0395525</idno><idno type="wicri:Area/Main/Corpus">010884</idno><idno type="wicri:Area/Main/Repository">00FD33</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ab initio calculations</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Piezoelectric semiconductors</term><term>Theoretical study</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7765</term><term>7115</term><term>7280E</term><term>Etude théorique</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Matériau semiconducteur piézoélectrique</term><term>Calcul ab initio</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">First-principles calculations are performed to compare the e<sub>33</sub> and e<sub>31</sub> piezoelectric coefficients of GaN and InN with those of the (Ga<sub>0.5</sub>In<sub>0.5</sub>)N alloy exhibiting an alternation of Ga and In planes along the c axis. The magnitude of e<sub>33</sub> and e<sub>31</sub> in the ordered alloy is found to be (15%-28%) smaller than the magnitude of the corresponding coefficients resulting from the compositional average over the GaN and InN parent compounds. The microscopic origins for this downward deviation of piezoelectricity from a linear behavior with composition are revealed and discussed. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Piezoelectricity of ordered (Ga<sub>0.5</sub>In<sub>0.5</sub>)N alloys</s1></fA08><fA11 i1="01" i2="1"><s1>AL YACOUB (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BELLAICHE (L.)</s1></fA11><fA14 i1="01"><s1>Physics Department, University of Arkansas, Fayetteville, Arkansas 72701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>2166-2168</s1></fA20><fA21><s1>2001-10-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0395525</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>First-principles calculations are performed to compare the e<sub>33</sub> and e<sub>31</sub> piezoelectric coefficients of GaN and InN with those of the (Ga<sub>0.5</sub>In<sub>0.5</sub>)N alloy exhibiting an alternation of Ga and In planes along the c axis. The magnitude of e<sub>33</sub> and e<sub>31</sub> in the ordered alloy is found to be (15%-28%) smaller than the magnitude of the corresponding coefficients resulting from the compositional average over the GaN and InN parent compounds. The microscopic origins for this downward deviation of piezoelectricity from a linear behavior with composition are revealed and discussed. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70G65</s0></fC02><fC02 i1="02" i2="3"><s0>001B70A15</s0></fC02><fC02 i1="03" i2="3"><s0>001B70B80E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7765</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7115</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7280E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Matériau semiconducteur piézoélectrique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Piezoelectric semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Calcul ab initio</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Ab initio calculations</s0></fC03><fN21><s1>274</s1></fN21><fN47 i1="01" i2="1"><s0>0139M000022</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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